Simple measurement of carrier induced refractive-index change in InGaAsP pin ridge waveguide structures-Reference-Cited by-同舟云学术

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Simple measurement of carrier induced refractive-index change in InGaAsP pin ridge waveguide structures

Published:1991 Issue:4 Volume:27 Page:297
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Schraud G.,Müller G.,Stoll L.,Wolff U.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910187?crawler=true&mimetype=application/pdf

Reference13 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. High thermally induced index variations with short response time in InP∕GaInAsP∕InP waveguide Schottky diodes;Electronics Letters;2009

4. Performance Optimization of a Reconfigurable Waveguide Digital Optical Switch on InGaAsP–InP: Design, Material, and Carrier Dynamics;IEEE Journal of Quantum Electronics;2007-12

5. Temperature mapping and thermal lensing in large-mode, high-power laser diodes;Applied Physics Letters;2006-11-13

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