Composition of phosphorus‐nitride film deposited on InP surfaces by a photochemical vapor deposition technique and electrical properties of the interface-Reference-Cited by-同舟云学术

Composition of phosphorus‐nitride film deposited on InP surfaces by a photochemical vapor deposition technique and electrical properties of the interface

Published:1990-12-17 Issue:25 Volume:57 Page:2680-2682
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jeong Yoon‐Ha,Lee Jae‐Hak,Bae Young‐Ho,Hong Young‐Tae

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.104192

Reference12 articles.

1. Effects on InP surface trap states ofinsituetching and phosphorus‐nitride deposition

2. Effects of deposition temperature of insulator films on the electrical characteristics of InP metal‐insulator‐semiconductor field‐effect transistors

3. Sulfur as a surface passivation for InP

4. A self‐consistent computer simulation of compound semiconductor metal‐insulator‐semiconductorC‐Vcurves based on the disorder‐induced gap‐state model

5. Characterization of pulsed laser deposited boron nitride thin films on InP

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon and Oxygen-Doped Phosphorus Nitride (COPN) for Continuous Selective and Stable H₂O₂ Production;ACS Catalysis;2023-10-27

2. Coherent Sub‐Nanometer Interface between Crystalline and Amorphous Materials Boosts Electrochemical Synthesis of Hydrogen Peroxide;Small;2023-06-25

3. Tuning the ratio of Bi/Bi2O3 in Bi/PNC nanosheet for high-efficiency electrosynthesis hydrogen peroxide;Nano Research;2023-04-28

4. CdP 2 N 4 and MnP 2 N 4 – Ternary Transition‐Metal Nitridophosphates;European Journal of Inorganic Chemistry;2016-03-04

5. Nontypical Luminescence Properties and Structural Relation of Ba3P5N10X:Eu2+ (X = Cl, I): Nitridophosphate Halides with Zeolite-like Structure;Chemistry of Materials;2015-09-08