The use of triisopropylantimony for the growth of InSb and GaSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348927
Reference14 articles.
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4. Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and
5. Mechanism of carbon incorporation in MOCVD GaAs
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