23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films-Reference-Cited by-同舟云学术

23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films

Published:2018-08-06 Issue:6 Volume:113 Page:061603
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yan Di¹,Cuevas Andres¹,Phang Sieu Pheng¹,Wan Yimao¹^ORCID,Macdonald Daniel¹

Affiliation:

1. Research School of Engineering, The Australian National University, Canberra ACT 2601, Australia

Funder

The Australian National University and University of Canberra

The Australian Renewable Energy Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5037610

Reference28 articles.

1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

2. Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

3. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

4. Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

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