Nano-indentation used to study pyramidal slip in GaN single crystals
Author:
Affiliation:
1. U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011322
Reference44 articles.
1. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
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4. Use of misfit strain to remove dislocations from epitaxial thin films
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