Room-temperature InAsSbP∕InAs light emitting diodes by liquid phase epitaxy for midinfrared (3–5μm) dynamic scene projection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2390655
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1. Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm
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3. Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
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1. Mid-infrared gas-sensing systems and applications;Mid-infrared Optoelectronics;2020
2. Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides;Technical Physics;2019-08
3. Current crowding impact at spatially and temporarily resolved thermal characters of large-area AlGaInP light emitting diodes operating in dimming/flashing modes;Journal of Applied Physics;2015-10-21
4. Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry;Journal of Applied Physics;2015-02-14
5. Bulk silicon as photonic dynamic infrared scene projector;Applied Physics Letters;2013-04
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