High‐resolution electron‐microscopy studies on laser‐annealed unsupported amorphous germanium films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335257
Reference19 articles.
1. Solid‐phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica
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5. Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge–Te Films
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1. Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins;Journal of Applied Crystallography;2009-01-24
2. Phase evolution in aluminum nitride thin films on Si(100) prepared by radio frequency magnetron sputtering;Thin Solid Films;2001-03
3. Morphological Instabilities during Explosive Crystallization of Germanium Films;MRS Proceedings;2000
4. High-resolution transmission electron microscopy study of pulsed laser beam crystallized Si thin film:the formation of hexagonal Si and defects;Thin Solid Films;1997-01
5. Periodic Phase Structure Formation in Pulse Induced Crystallization of Films;Physica Status Solidi (a);1996-12-16
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