Formation of semiconductor epitaxial films by pulse heating crystallization or regrowth-Reference-Cited by-同舟云学术

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Formation of semiconductor epitaxial films by pulse heating crystallization or regrowth

Published:1983-03-16 Issue:1 Volume:76 Page:179-190
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Aleksandrov L. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference51 articles.

1. , , , and , in: Abstr. 6th Conf. Growth and Synthesis Processes of Semiconductor Crystal and Films, Academy of Sciences of the USSR, Sibirian Branche, Novosibirsk 1982 (p. 24).

2. The use of ion beams in molecular beam epitaxy

3. Transition Regions in Epitaxial Semiconductor Films, Izd. Nauka, Novosibirsk 1978 (in Russian).

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4D visualization of embryonic, structural crystallization by single-pulse microscopy;Proceedings of the National Academy of Sciences;2008-06-18

2. The Amorphous to Crystalline Phase Transition and Vice Versa;Key Engineering Materials;1995-03

3. Structural transformation in silicon by pulse heating;Progress in Crystal Growth and Characterization of Materials;1992-01

4. Explosive crystallization phenomena in SOI structures;Journal of Materials Research;1989-12

5. Nueleation Controlled Ignition of Explosive Crystallization in SOI Structures;Physica Status Solidi (a);1989-04-16

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