First-principles study of MnAl for its application in MgO-based perpendicular magnetic tunnel junctions-Reference-Cited by-同舟云学术

First-principles study of MnAl for its application in MgO-based perpendicular magnetic tunnel junctions

Published:2017-06-19 Issue:25 Volume:110 Page:252403
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Xuan¹,Tao L. L.¹,Zhang Jia²,Liang S. H.¹,Jiang Leina¹,Han X. F.¹^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

2. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, China

Funder

National Natural Science Foundation of China (NSFC)

Ministry of Science and Technology of the People's Republic of China (MOST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4986449

Reference45 articles.

1. Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

2. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

3. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

4. MgO(001) barrier based magnetic tunnel junctions and their device applications

5. Large magnetoresistance in bccCo∕MgO∕CoandFeCo∕MgO∕FeCotunnel junctions

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