Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films

Abstract

τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.