Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1618931
Reference20 articles.
1. Quantum‐well infrared photodetectors
2. Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells
3. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
4. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
5. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy
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2. Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE;Journal of Physics D: Applied Physics;2016-10-04
3. Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs;Applied Physics A;2015-05-17
4. Dilute nitride InNP quantum dots: Growth and photoluminescence mechanism;Applied Physics Letters;2014-10-27
5. Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs;Nanoscale Research Letters;2014-01-13
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