An analysis of 1.55μm InAs∕InP quantum dash lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2952194
Reference12 articles.
1. Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1directly modulated lasers and 40 Gb s−1signal-regenerative amplifiers
2. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m
3. Strain distributions in quantum dots of arbitrary shape
4. Theory of the electronic structure of GaN/AlN hexagonal quantum dots
5. Eight-bandk⋅pmodel of strained zinc-blende crystals
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1. Low-chirp QD-based directly modulated lasers monolithically integrated with a ring resonator for long-range access network;Novel In-Plane Semiconductor Lasers XIV;2015-03-10
2. On the nature of the linewidth enhancement factor in p-doped quantum dash based lasers;Applied Physics Letters;2014-12-15
3. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
4. The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system;Journal of Applied Physics;2014-06-07
5. Bistability of threshold in quantum dash‐in‐a‐well lasers;IET Optoelectronics;2014-04
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