Application of UV photoluminescence imaging spectroscopy for stacking faults identification on thick, lightly n-type doped, 4°-off 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/3/1.4915128.pdf?itemId=/content/aip/journal/adva/5/3/10.1063/1.4915128&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference27 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
3. Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor
4. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
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1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
2. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06
3. Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate;Materials Science in Semiconductor Processing;2024-06
4. Insight on defects mechanically introduced by nanoindentation in 4H-SiC p-n diode;Materials & Design;2024-03
5. Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers;Scripta Materialia;2023-10
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