Growth Pips and Whiskers in Epitaxially Grown Silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1714524
Reference35 articles.
1. Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon Substrates
2. Epitaxial Vapor Growth of Single Crystal Ge
3. Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
4. Structure Defects in Pyrolytic Silicon Epitaxial Films
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1. Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions;Philosophical Magazine A;1990-07
2. Oriented overgrowths in MOVPE-grown GaAs;Journal of Crystal Growth;1988-03
3. Growth Characteristics of CVD Beta‐Silicon Carbide;Journal of The Electrochemical Society;1987-12-01
4. Role of Defects in the Nucleation of Whiskers Growing from Vapor;Growth of Crystals;1986
5. EPitaxial regrowth and defect formation during pulsed nanosecond annealing of amorphous layers. Part II: Model of liquid phase epitaxy and secondary defect formation;Radiation Effects;1985-01
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