Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions-Reference-Cited by-同舟云学术

Hillock formation in InP epitaxial layers: A mechanism based on dislocation/stacking fault interactions

Published:1990-07 Issue:1 Volume:62 Page:103-114
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Gleichmann R.,Frigeri C.,Pelosi C.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619008244338

Reference18 articles.

1. Attolini, G., Frigeri, C., Pelosi, C. and Salviati, G. 1986a. Proceedings of the XIth International Conference on Electron Microscopy. 1986a, Kyoto. Edited by: Imura, T., Maruse, S. and Suzuki, T. pp.397Tokyo: Japan Society for Electron Microscopy. 1986c, Appl. Phys. Lett., 49, 167.

2. Attolini, G., Frigeri, G., Pelosi, C., Salviati, G. and Berti, R. 1986b.Semiconductor-bused Heterostructures, Edited by: Green, M. L. 127Pittsburgh, Pennsylvania: The Metallurgical Society of AIME.

3. Microtwinning and growth defects in GaAs MBE layers

4. Hillocks on epitaxial GaAs grown from trimethylgallium and arsine

5. The growth of crystals and the equilibrium structure of their surfaces

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