Characterization of annealed heavily C‐dopedp+‐AlGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354220
Reference26 articles.
1. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
2. Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
3. Instability of partially disordered carbon‐doped AlGaAs/GaAs superlattices
4. MOCVD grown carbon-doped graded-base AlGaAs/GaAs HBTs
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1. Characterization of carbon-doped GaAs grown by metalorganic vapor-phase epitaxy;Journal of Crystal Growth;1999-11
2. Raman scattering observations andab initiomodels of dicarbon complexes in AlAs;Physical Review B;1999-08-15
3. Carbon-related defects in carbon-doped GaAs by high-temperature annealing;Journal of Applied Physics;1997-08
4. Carbon doping in InAlAs grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1997-04
5. Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1996-12-15
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