Anisotropic Si(100) etching induced by high translational energy Cl2molecular beams
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110143
Reference8 articles.
1. Anisotropic etching of polycrystalline silicon with a hot Cl2molecular beam
2. Hot-jet etching of Pb, GaAs, and Si
3. Generation of low-energy neutral beams and radiation damage of SiO2/Si by neutral bombardment
4. Reactive–fast‐atom beam etching of GaAs using Cl2gas
5. Anisotropic Si Etching by a Supersonic Cl2 Beam
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1. Surface Reactions of Plasma assisted Atomic Layer Etching for Silicon;Vacuum and Surface Science;2020-12-10
2. Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces;Surface Science Reports;2017-05
3. Supersonic Molecular Beam Experiments on Surface Chemical Reactions;The Chemical Record;2014-07-17
4. Molecular dynamics simulations of low-energy Clatoms etching Si(100) surface;Acta Physica Sinica;2011
5. Surface chemical reactions induced by well-controlled molecular beams: translational energy and molecular orientation control;Journal of Physics: Condensed Matter;2010-06-11
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