Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth-Reference-Cited by-同舟云学术

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Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth

Published:1988-12-12 Issue:24 Volume:53 Page:2409-2410
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zahn D. R. T.,Williams R. H.,Golding T. D.,Dinan J. H.,Mackey K. J.,Geurts J.,Richter W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.100245

Reference7 articles.

1. An MBE route towards CdTe/InSb superlattices

2. A study of the growth conditions necessary for reproducible preparation of high perfection CdTe films on InSb by MBE

3. Molecular beam epitaxy of CdTe and CdxHg1−xTe on InSb

4. Growth and interdiffusion in CdTe/InSb multilayers

5. On the properties of InSb quantum wells

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