Gated photoluminescence method for interface state density determination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106559
Reference9 articles.
1. Surface states at steam-grown silicon-silicon dioxide interfaces
2. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
3. Surface Band Bending Effects on Photoluminescence Intensity in n-InP Schottky and MIS Diodes
4. Kinetics of Low Pressure CVD Growth of SiO2 on InP and Si
5. Role of polysulfides in the passivation of the InP surface
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1. Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies;Thin Solid Films;2008-04
2. Rigorous analysis of photoluminescence efficiency for characterisation of electronic properties of InP(100) surfaces;Vacuum;2002-09
3. Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer;Applied Surface Science;2002-05
4. Analysis of interface states of n-InP MIS structures based on bias dependence of capacitance and photoluminescence intensity;Materials Science and Engineering: B;2000-08
5. Electrical and gated photoluminescence intensity studies on Schottky and oxidized Schottky structures;Thin Solid Films;1999-03
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