Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies-Reference-Cited by-同舟云学术

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Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

Published:2008-04 Issue:12 Volume:516 Page:4122-4127
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mattalah M.,Telia A.,Soltani A.,De Jaeger J.-C.,Thevenin P.,Bath A.,Akkal B.,Abid H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor

2. Deep Level Transient Spectroscopic Analysis on Au/SiO2/InP MOS Structures

3. BaTiO3 as an insulating layer for InP-based metal-insulator–semiconductor structures

4. Optical properties of boron nitride thin films deposited by microwave PECVD

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate;Materials Science and Engineering: B;2021-08

2. Analytical modeling and analysis of Al m Ga1−m N/GaN HEMTs employing both field-plate and high-k dielectric stack for high-voltage operation;Journal of Computational Electronics;2013-06-01

3. Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate;physica status solidi (c);2012-02-29

4. AlGaN/GaN MISHEMT with hBN as gate dielectric;Diamond and Related Materials;2009-05

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