Refined drift-diffusion model for the simulation of charge transport across layer interfaces in organic semiconductor devices
Author:
Affiliation:
1. Fluxim AG, Katharina-Sulzer-Platz 2, CH-8400 Winterthur, Switzerland
2. Zurich University of Applied Sciences, Institute of Computational Physics, Winterthur, Switzerland
Funder
Swiss National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5043245
Reference34 articles.
1. Nonradiative recombination centers and electrical aging of organic light-emitting diodes: Direct connection between accumulation of trapped charge and luminance loss
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