GaN photovoltaic leakage current and correlation to grain size
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3488886
Reference20 articles.
1. R. Quay, Gallium Nitride Electronics, Springer Series in Materials Science Vol. 96 (Springer-Verlag, Berlin, Heidelberg, 2008), pp. 10–13.
2. Radiation hardness of gallium nitride
3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
4. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
5. Demonstration of GaN-Based Solar Cells With GaN/InGaN Superlattice Absorption Layers
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4. Optical, piezoelectric, leakage current and polarization fatigue studies of NBT-KNN ceramics near MPB;Ferroelectrics;2017-08-18
5. Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelengths up to 570 nm;Applied Physics Letters;2016-02-29
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