Effect of antimony ion implantation on Al‐silicon Schottky diode characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334058
Reference9 articles.
1. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
2. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
3. Control of Schottky barrier height using highly doped surface layers
4. Reduction in the effective barrier height in PtSi-p-Si Schottky diodes by using low energy ion implantation
5. On resolving the anomaly of indium-tin oxide silicon junctions
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