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Schottky Rectifiers

Published:2018-09-29 Issue: Volume: Page:171-206
ISSN:
Container-title:Fundamentals of Power Semiconductor Devices
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Author:

Baliga B. Jayant

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-93988-9_4

Reference21 articles.

1. Baliga BJ, “Schottky barrier rectifiers and methods of forming the same”, U.S. Patent 5,612,567, 18 Mar 1997

2. Baliga BJ (2001) The future of power semiconductor technology. Proc IEEE 89:822–832

3. Baliga BJ (2005) Silicon carbide power devices. World Scientific Publishing Company, Singapore

4. Baliga BJ (1994) Power semiconductor devices for variable frequency drives. Proc IEEE 82:1112–1122

5. Crowell CR, Sze SM (1966) Current transport in metal-semiconductor barriers. Solid State Electron 9:1035–1048

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