Thermal annealing effect on nitrogen vacancy in proton-irradiated AlxGa1−xN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463703
Reference11 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Electrical properties of n-type vapor-grown gallium nitride
3. Towards the Identification of the Dominant Donor in GaN
4. Defect Donor and Acceptor in GaN
5. Native defects in gallium nitride
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