Uniaxial and biaxial strain engineering in 2D MoS2 with lithographically patterned thin film stressors-Reference-Cited by-同舟云学术

Uniaxial and biaxial strain engineering in 2D MoS2 with lithographically patterned thin film stressors

Published:2021-05-24 Issue:21 Volume:118 Page:213104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Azizimanesh Ahmad¹^ORCID,Peña Tara¹^ORCID,Sewaket Arfan¹,Hou Wenhui¹^ORCID,Wu Stephen M.¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA

2. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0049446

Reference43 articles.

1. A 90-nm Logic Technology Featuring Strained-Silicon

2. J. L. Hoyt , H. M. Nayfeh , S. Eguchi , I. Aberg , G. Xia , T. Drake , E. A. Fitzgerald , and D. A. Antoniadis , in Technical Digest-International Electron Devices Meeting (2002), p. 23.

3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

4. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

5. Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs;Nature Communications;2024-08-13

2. Strain Induced by Evaporated-Metal Contacts on Monolayer MoS₂ Transistors;IEEE Electron Device Letters;2024-08

3. Enhancing Carrier Mobility in Monolayer MoS₂ Transistors with Process-Induced Strain;ACS Nano;2024-05-03

4. Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides;Advanced Optical Materials;2024-03-06

5. Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy;Acta Mechanica Sinica;2024-02-07