Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4705293
Reference14 articles.
1. Rapid thermal annealing of Be, Si, and Zn implanted GaAs using an ultrahigh power argon arc lamp
2. The Application of Differential Hall Effect Continuous Anodic Oxidation Technique for Ultra Shallow Structures
3. Chemical Etching of Ge for Differential Hall Measurements
4. Mesoporous Germanium Formation by Electrochemical Etching
5. Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
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2. N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting;Applied Surface Science;2020-04
3. A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1−xGex and Si layers;Beilstein Journal of Nanotechnology;2018-07-05
4. Optimal process parameters for phosphorus spin-on-doping of germanium;Applied Surface Science;2017-01
5. Dislocation loops as a mechanism for thermoelectric power factor enhancement in silicon nano-layers;Applied Physics Letters;2016-10-24
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