Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99151
Reference11 articles.
1. Molecular beam and solid-phase epitaxies of silicon under ultra-high vacuum
2. Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
3. Boron heavy doping for Si molecular beam epitaxy using a HBO2source
4. Strain Compensation in Silicon by Diffused Impurities
5. The Lattice Misfit and Its Compensation in the Si‐Epitaxial Layer by Doping with Germanium and Carbon
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1. Effect of doping and counterdoping on high-pressure phase transitions of silicon;Applied Physics Letters;2010-06-21
2. An STM study of Ge heteroepitaxial growth on Si(111)√3×√3-B surfaces;Surface Science;2008-11
3. Etch-stop characteristics of heavily B/Ge-doped silicon epilayer in KOH and TMAH;Sensors and Actuators A: Physical;2005-09
4. Increased thermal stability due to addition of Ge in B/Si(111) heterostructures;Physica B: Condensed Matter;1996-04
5. The effect of in situ boron doping on the strain relaxation of Si0.8Ge0.2 : B/Si heterostructure grown by molecular beam epitaxy;Journal of Crystal Growth;1995-05
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