Origin of residual stress in the formation of boron nitride film by sputtering with Ar ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1600527
Reference21 articles.
1. Cubic boron nitride: synthesis, physicochemical properties and applications
2. Material selection for hard coatings
3. Ultraviolet light‐emitting diode of a cubic boron nitridepnjunction made at high pressure
4. On the role of ions in the formation of cubic boron nitride films by ion-assisted deposition
5. Phase control of cubic boron nitride thin films
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1. Nucleation retardation of cubic boron nitride films caused by the addition of oxygen in argon‑nitrogen sputtering gas;Diamond and Related Materials;2021-12
2. Exploration of Growth Window for Phase-Pure Cubic Boron Nitride Films Prepared in a Pure N2 Plasma;Coatings;2018-02-24
3. Effect of deposition temperature on the alignment of hexagonal laminates in turbostratic boron nitride thin film;Surface and Coatings Technology;2014-03
4. Effect of substrate bias and hydrogen addition on the residual stress of BCN film with hexagonal structure prepared by sputtering of a B4C target with Ar/N2 reactive gas;Thin Solid Films;2013-12
5. Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film;Metals and Materials International;2013-09-30
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