Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM-Reference-Cited by-同舟云学术

Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

Published:2018-11 Issue:11 Volume:8 Page:115327
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Binghai¹,Dong Zhi Li²^ORCID,Hua Younan¹,Fu Chao¹,Li Xiaomin¹,Tan Pik Kee³,Zhao Yuzhe³

Affiliation:

1. Wintech Nano-Technology Service Pte Ltd, 117684, Singapore

2. School of Materials Science & Engineering, College of Engineering, Nangyang Technologic University, 639798, Singapore

3. Department of Product, Test and Failure Analysis, Globalfoundries Singapore Pte Ltd, 738406, Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5051813

Reference27 articles.

1. R. Doering and Y. Nishi, Handbook of semiconductor manufacturing technology, 2nd edition, Taylor & Francis Group, Boca Raton, London and New York, 2008 pp. 13–31.

2. A Logic Nanotechnology Featuring Strained-Silicon

3. A 90-nm Logic Technology Featuring Strained-Silicon

4. Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices

5. The degradation of TDDB characteristics of Si0/sub 2//Si/sub 3/N/sub 4//Si0/sub 2/ stacked films caused by surface roughness of Si/sub 3/N/sub 4/ films (DRAMs)

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