Structure of theDXstate formed by donors in (Al,Ga)As and Ga(As,P)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360100
Reference35 articles.
1. Te and Ge — doping studies in Ga1−xAlxAs
2. Deep donor levels (DXcenters) in III‐V semiconductors
3. Deep donor levels (DXcenters) in III‐V semiconductors
4. Deep donor levels (DXcenters) in III‐V semiconductors
5. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
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