Modulated photocarrier grating technique for diffusion length measurement in amorphous semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352894
Reference5 articles.
1. Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
2. Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique
3. Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs
4. Ambipolar transport in amorphous semiconductors in the lifetime and relaxation-time regimes investigated by the steady-state photocarrier grating technique
5. Theory of the steady-state-photocarrier-grating technique for obtaining accurate diffusion-length measurements in amorphous silicon
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