High-temperature healing of interfacial voids in GaAs wafer bonding
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1430888
Reference13 articles.
1. Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces
2. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
3. GaAs wafer bonding by atomic hydrogen surface cleaning
4. Diffusion-bonded stacked GaAs for quasiphase- matched second-harmonic generation of a carbon dioxide laser
5. Improved GaAs Bonding Process for Quasi‐Phase‐Matched Second Harmonic Generation
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Interface Morphology and Electrical Properties of Bonded GaAs/GaAs Wafers at Different Temperatures;ECS Transactions;2013-03-15
2. Nanoscaled interfacial oxide layers of bonded n- and p-type GaAs wafers;Applied Physics Letters;2006-04-24
3. Anomalous electrical performance of nanoscaled interfacial oxides for bonded n-GaAs wafers;Applied Physics Letters;2006-03-13
4. Effects of annealing temperature on electrical resistance of bonded n‐GaAs wafers;Applied Physics Letters;2004-11-22
5. Healing kinetics of interfacial voids in GaAs wafer bonding;Applied Physics Letters;2002-08-19
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