Interface Morphology and Electrical Properties of Bonded GaAs/GaAs Wafers at Different Temperatures
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Published:2013-03-15
Issue:7
Volume:50
Page:109-112
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Chang Sheng-Chieh,Wu YewChung Sermon,Chang Nancy
Abstract
The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. When temperature increase above 600{degree sign}C, the amorphous oxide layer declined and formed perfect bonding area. Current-voltage characteristic shows typical diode behaviors in all temperature conditions.
Publisher
The Electrochemical Society