The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1763231
Reference13 articles.
1. Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers
2. Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
3. Exciton Storage in Semiconductor Self-Assembled Quantum Dots
4. Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
5. Rapid carrier relaxation in self-assembledInxGa1−xAs/GaAs quantum dots
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1. The charged exciton in an InGaN quantum dot on a GaN pyramid;Applied Physics Letters;2013-07
2. Circularly polarized emission from ensembles of InAs/GaAs quantum dots;Journal of Applied Physics;2011-07
3. Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy;Applied Physics Letters;2010-05-03
4. Magnetic field effects on optical and transport properties inInAs∕GaAsquantum dots;Physical Review B;2006-12-12
5. Formation mode of self-assembled CdTe quantum dots directly grown on GaAs substrates;Journal of Crystal Growth;2006-06
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