Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4922877
Reference20 articles.
1. Electron mobility inAlxGa1−xN/GaNheterostructures
2. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
3. Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications
4. Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures
5. AlGaN/GaN microwave HFET including a thin AlN carrier exclusion layer
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