Photoluminescence and magnetic resonance studies of Er3+in MeV ion‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104621
Reference6 articles.
1. Temperature dependence of intra‐4f‐shell photo‐ and electroluminescence spectra for erbium‐doped GaAs
2. 1.54 μm room‐temperature electroluminescence of erbium‐doped GaAs and GaAlAs grown by molecular beam epitaxy
3. Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m
4. 1.54 μm electroluminescence in MeV ion implanted Er-doped GaAs
5. Electron spin resonance of erbium in gallium arsenide
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2. TEM and PL characterization of erbium and oxygen co-implanted LT-GaAs:Be;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
3. ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy;EPR in the 21st Century;2002
4. Zeeman splitting factor of the Er3+ ion in a crystal field;Applied Magnetic Resonance;2001-08
5. Codoping effect of O2 into Er-doped InP epitaxial layers grown by OMVPE;Physica E: Low-dimensional Systems and Nanostructures;2001-05
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