ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

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ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy

Published:2002 Issue: Volume: Page:302-305
ISSN:
Container-title:EPR in the 21st Century
language:
Short-container-title:

Author:

Yoshikawa J.,Okubo S.,Ohtab H.,Koide T.,Kawamoto T.,Fujiwara Y.,Takeda Y.

Publisher

Elsevier

Reference10 articles.

1. extended abstracts of the 5th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors;Fujiwara,1999

2. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen

3. ESR study of codoped with oxygen grown by organometallic vapor phase epitaxy

4. Y. Fujiwara and Y. Takeda, private communications.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in nature-guided materials processing;Science and Technology of Advanced Materials;2003-01

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