Efficient oxygen gettering in Si by coimplantation of hydrogen and helium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3005595
Reference15 articles.
1. Mechanisms of transition-metal gettering in silicon
2. Interaction of defects and metals with nanocavities in silicon
3. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
4. Voids in Silicon by He Implantation: From Basic to Applications
5. Microstructural Properties of Helium Implanted Void Layers in Silicon as Related to Front‐Side Gettering
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