Decoupling of thermo-electronic effect by traveling photothermal mirror method for characterization of thermal properties of semiconductors-Reference-Cited by-同舟云学术

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Decoupling of thermo-electronic effect by traveling photothermal mirror method for characterization of thermal properties of semiconductors

Published:2020-03-16 Issue:11 Volume:116 Page:114102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dong Jingtao¹^ORCID,Li Jianquan¹,Yang Lei¹,Zhang Tengda¹,Lu Rongsheng¹,Li Jingsong²,Zhang Lei²,Zhou Sheng²^ORCID

Affiliation:

1. School of Instrument Science and Opto-Electronic Engineering, Hefei University of Technology, Hefei, Anhui 230009, China

2. Key Laboratory of Opto-Electronic Information Acquisition and Manipulation, Ministry of Education, Anhui University, Hefei, Anhui 230601, China

Funder

Open Fund of Key Laboratory of Opto-electronic Information Acquisition and Manipulation of Ministry of Education

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0004143

Reference19 articles.

1. Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys

2. Photothermal deflection measurement on heat transport in GaAs epitaxial layers

3. Photothermal deflection studies of GaAs epitaxial layers

4. Photothermal investigation of transport in semiconductors: Theory and experiment

5. New photothermal deflection method for thermal diffusivity measurement of semiconductor wafers

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