Laser ablation of ZnSe using pulsed 193‐nm irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349485
Reference23 articles.
1. Recent developments in the MOVPE of II–VI compounds
2. Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition
3. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
4. Preferential (111) orientation of ZnSe on (100) GaAs deposited by laser-induced MOCVD
5. Laser‐assisted metalorganic chemical vapor deposition of zinc selenide epitaxial films
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evidence of an implantation process in carbon deposition on Si(100) at high substrate temperature by laser ablation;Surface Science;1996-12
2. Synthesis and deposition of silicon nitride films by laser reactive ablation of silicon in low pressure ammonia: A parametric study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-07
3. Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs by Pulsed Laser Deposition;MRS Proceedings;1996
4. The excimer laser in atomic spectroscopy;Advances in Atomic Spectroscopy;1995
5. Properties of ZnS thin films prepared by 248‐nm pulsed laser deposition;Applied Physics Letters;1993-10-04
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