Microscopic origin of read current noise in TaOx-based resistive switching memory by ultra-low temperature measurement
Author:
Affiliation:
1. Institute of Microelectronics, Peking University, Beijing 100871, China
Funder
Open Fund of IPOC
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945790
Reference32 articles.
1. Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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