Microstrain and macrostrain profiles in ZnSe epitaxial layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102803
Reference6 articles.
1. Depth profiling of elastic strains in lattice-mismatched semiconductor heterostructures and strained-layer superlattices
2. Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
3. Raman spectrum of a ZnSe/GaAs heterostructure
4. Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
5. Thickness dependence of strains in strained‐layer superlattices
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1. Formation of nanogratings on the surface of a ZnSe crystal irradiated by femtosecond laser pulses;Physical Review B;2005-09-23
2. The characterization of semiconductor layer and interface quality with special reference to raman spectroscopy;Progress in Crystal Growth and Characterization of Materials;1996-01
3. Structural properties of ZnSe on GaAs grown by atomic layer epitaxy;Journal of Applied Physics;1994-07-15
4. Far-infrared and Raman spectroscopy of Zn(Se,S) layers;Advanced Materials for Optics and Electronics;1994-01
5. Study of strained epitaxial layers by Raman techniques;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-07
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