Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2953174
Reference17 articles.
1. Solid-State Light Sources Getting Smart
2. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
3. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes
4. Improvement of light extraction efficiency of flip-chip light-emitting diode by texturing the bottom side surface of sapphire substrate
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3. Highly efficient GaN-based high-power flip-chip light-emitting diodes;Optics Express;2019-05-01
4. Influence of light absorption on the metallic nanotextured reflectors of GaN-based light emitting diodes;Journal of Semiconductors;2019-03
5. Enhanced Diffuse Reflectance and Microstructure Properties of Hybrid Titanium Dioxide Nanocomposite Coating;Nanoscale Research Letters;2018-10-22
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