Multiple wavelength Fabry–Pérot lasers fabricated by vacancy‐enhanced quantum well disordering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.114759
Reference12 articles.
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
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2. Conservation of quantum efficiency in quantum well intermixing by stress engineering with dielectric bilayers;Semiconductor Science and Technology;2018-01-05
3. Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy Disordering Quantum Well Intermixing;IEEE Journal of the Electron Devices Society;2017-03
4. Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors;Applied Physics Letters;2011-06-13
5. Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures;Semiconductor Science and Technology;2007-07-19
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