Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD
2. Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing
3. Photonic integrated circuits fabricated using ion implantation
4. Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators
5. Quantum well intermixing
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1. SixNy沉积参数对量子阱混杂效果的影响;Acta Optica Sinica;2022
2. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures;Semiconductor Science and Technology;2016-07-21
3. Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method;SPIE Proceedings;2010-02-11
4. Cap Layer Influence on Impurity-Free Vacancy Disordering of InGaAs/InP Quantum Well Structure;Chinese Physics Letters;2010-01
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