Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4893561
Reference35 articles.
1. DC Characterization of Tunnel Diodes Under Stable Non-Oscillatory Circuit Conditions
2. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators
3. Ballistic transport in GaN/AlGaN resonant tunneling diodes
4. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
5. Origin of the electrical instabilities in GaN/AlGaN double-barrier structure
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2. III-nitrides based resonant tunneling diodes;Journal of Physics D: Applied Physics;2020-04-26
3. Hot Electrons in InxGa1–xN and InxAl1–xN Binary Solid Solutions;Moscow University Physics Bulletin;2018-05
4. High field electron transport in indium gallium nitride and indium aluminium nitride;Journal of Applied Physics;2017-08-14
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