InGaAsP/InP buried‐heterostructure lasers with concurrent fabrication of the stripes and mirrors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99995
Reference19 articles.
1. InGaAsP/InP buried‐heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors
2. Low threshold GaInAsP/InP buried‐heterostructure lasers with a chemically etched and mass‐transported mirror
3. Large monolithic two‐dimensional arrays of GaInAsP/InP surface‐emitting lasers
4. CW operation of 1.5 μm GaInAsP/InP buried-heterostructure laser with a reactive-ion-etched facet
5. Continuous operation of monolithic dynamic‐single‐mode coupled‐cavity lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel method for measuring and analyzing surface roughness on semiconductor laser etched facets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-11
2. Lateral-mode analysis of narrow-stripe semiconductor lasers with a cylindrically concave end facet;IEEE Journal of Quantum Electronics;1991-03
3. GaInAsP/InP buried‐heterostructure surface‐emitting diode laser with monolithic integrated bifocal microlens;Applied Physics Letters;1990-03-26
4. Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays;Applied Physics Letters;1989-02-20
5. Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication;MRS Proceedings;1988
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