Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication-Reference-Cited by-同舟云学术

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Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication

Published:1988 Issue: Volume:144 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Donnelly J. P.,Anderson K. K.,Woodhouse J. D.,Goodhue W. D.,Yap D.,Gaidis M. C.,Wang C. A.

Abstract

ABSTRACTIon-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference36 articles.

1. 36. Flanders D. , private communication.

2. Prevention of InP surface decomposition in liquid phase epitaxial growth

3. Close‐contact annealing of ion‐implanted GaAs and InP

4. Cracking of SiO2 layers on annealed InP

5. Rapid thermal annealing of Se and Be implanted InP using an ultrahigh power argon arc lamp

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Introduction and Background;Monolithic Diode-Laser Arrays;1994

2. A comparison of the amorphization induced in AlxGa1−xAs and GaAs by heavy‐ion irradiation;Journal of Applied Physics;1991-02

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