Direct microscopic correlation of crystal orientation and luminescence in spontaneously formed nonpolar and semipolar GaN growth domains
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3386539
Reference15 articles.
1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
2. Strain-induced polarization in wurtzite III-nitride semipolar layers
3. Micro-structural anisotropy of a-plane GaN analyzed by high resolution X-ray diffraction
4. Luminescence from stacking faults in gallium nitride
5. Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask
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1. Regulating the electronic and optical properties of GaN/InN core/shell nanowires: A first-principles study;International Journal of Modern Physics B;2020-09-15
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3. Improvement of (1122) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-11-01
4. Improvement of ($11\bar{2}2$) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2011-10-25
5. Unintentional doping ofa-plane GaN by insertion ofin situSiN masks;Journal of Physics D: Applied Physics;2011-02-08
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